BDX53 Datasheet, PDF (1/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(8A.,45-100V,60W)

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BDX53/A/B/C
DESCRIPTION
With TO-220C package
High DC current gain
DARLINGTON
Complement to type BDX54/A/B/C
APPLICATIONS
Power linear and switching applications
Hammer drivers,audio amplifiers
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
BDX53
V_CBO
Collector-base voltage
BDX53A
Open emitter
BDX53B
BDX53C
BDX53
V_CEO
BDX53A
Collector-emitter voltage
Open base
BDX53B
BDX53C
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current-DC
I_CM
Collector current-Pulse
I_B
Base current
P_C
Collector power dissipation
T_C=25
T_j
Junction temperature
T_stg
Storage temperature
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance junction to case
VALUE
45
60
80
100
45
60
80
100
5
8
12
0.2
60
150
-65~150
UNIT
V
V
V
A
A
A
W
MAX
2.08
UNIT
/W