 English |
|
|
|
|
|
|
|
| BDX34 Datasheet, PDF (2/3 Pages) Power Innovations Ltd – Transistor de puissance PNP darlington | |||
| |||
| ◁ |
Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDX34
VCEO(SUS)
Collector-emitter
sustaining voltage
BDX34A
BDX34B
IC=-0.1A, IB=0
BDX34C
VCEsat
Collector-emitter
saturation voltage
BDX34/34A IC=-4A ,IB=-8mA
BDX34B/34C IC=-3A ,IB=-6mA
BDX34/34A IC=-4A ; VCE=-3V
VBE
Base-emitter on voltage
BDX34B/34C IC=-3A ; VCE=-3V
BDX34
VCB=-45V, IE=0
BDX34A
ICBO
Collector cut-off current
BDX34B
VCB=-60V, IE=0
VCB=-80V, IE=0
BDX34C
VCB=-100V, IE=0
BDX34
VCE=-22V, IB=0
BDX34A
ICEO
Collector cut-off current
BDX34B
VCE=-30V, IB=0
VCE=-40V, IB=0
BDX34C
VCE=-50V, IB=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE
DC current gain
BDX34/34A IC=-4A ; VCE=-3V
BDX34B/34C IC=-3A ; VCE=-3V
VF
Forward diode voltage
IF=-8A
Product Specification
BDX34/A/B/C
MIN TYP. MAX UNIT
-45
-60
V
-80
-100
-2.5
V
-2.5
V
-0.2 mA
-0.5 mA
-5.0 mA
750
-4.0
V
2
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese