BDX34 Datasheet, PDF (1/3 Pages) Power Innovations Ltd – Transistor de puissance PNP darlington

Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
BDX34/A/B/C
DESCRIPTION
With TO-220C package
High DC current gain
DARLINGTON
Complement to type BDX33/A/B/C
APPLICATIONS
For power linear and switching
applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
BDX34
V_CBO
Collector-base voltage
BDX34A
BDX34B
BDX34C
BDX34
V_CEO
BDX34A
Collector-emitter voltage
BDX34B
BDX34C
V_EBO
Emitter-base voltage
I_C
Collector current-DC
I_CM
Collector current-Pulse
I_B
Base current
P_C
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance junction to case
VALUE
-45
-60
-80
-100
-45
-60
-80
-100
-5
-10
-15
-0.25
70
150
-65~150
UNIT
V
V
V
A
A
A
W
MAX
1.78
UNIT
/W