 English |
|
|
|
|
|
|
|
| BDX14 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor | |||
| |||
| ◁ |
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
BDX14
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -100mA; IB= 0
VCER(SUS) Collector-Emitter Sustaining Voltage IC= -100mA; RBE= 100Ω
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB=B -50mA
VBE(on) Base-Emitter On Voltage
ICEX
Collector Cutoff Current
hFE
DC Current Gain
IC= -0.5A; VCE= -4V
VCE= -90V; VBE= 1.5V
VCE= -30V; VBE= 1.5V,TC=150â
IC= -0.5A; VCE= -4V
fT
Current Gain-Bandwidth Product
IC= -0.2A; VCE= -10V
MIN MAX UNIT
-55
V
-60
V
-7
V
-1.0
V
-1.7
V
-1.0
-5.0
mA
25
100
4
MHz
isc Websiteï¼www.iscsemi.cn
2
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese