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| BDX14 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
BDX14
DESCRIPTION
·Continuous Collector Current-IC= -4A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -55V(Min.)
APPLICATIONS
·Designed for general purpose switching and amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-90
V
VCER
Collector-Emitter Voltage RBE= 100Ω
-60
V
VCEO
Collector-Emitter Voltage
-55
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
-4
A
IBB
Base Current-Continuous
-2
A
PC
Collector Power Dissipation@TC=25â
29
W
TJ
Junction Temperature
200
â
Tstg
Storage Temperature
-65~200 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
6.0 â/W
isc Websiteï¼www.iscsemi.cn
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