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| BDW64 Datasheet, PDF (2/2 Pages) Power Innovations Ltd – PNP SILICON POWER DARLINGTONS | |||
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INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
BDW64/A/B/C/D
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
BDW64
CONDITIONS
V(BR)CEO
Collector-Emitter
Breakdown Voltage
BDW64A
BDW64B IC= -30mA; IB= 0
BDW64C
BDW64D
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -2A; IB=B -12mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -6A; IB=B -60mA
VBE(on)
VECF
Base-Emitter On Voltage
C-E Diode Forward Voltage
IC= -2A; VCE= -3V
IF= -6A
BDW64
VCE= -30V; IB=B 0
BDW64A VCE= -30V; IB=B 0
ICEO
Collector Cutoff Current BDW64B VCE= -40V; IB=B 0
BDW64C VCE= -50V; IB=B 0
BDW64D VCE= -60V; IB=B 0
BDW64
VCB= -45V; IE= 0
VCB= -45V; IE= 0; TJ= 150â
BDW64A
VCB= -60V; IE= 0
VCB= -60V; IE= 0; TJ= 150â
ICBO
Collector Cutoff Current BDW64B
VCB= -80V; IE= 0
VCB= -80V; IE= 0; TJ= 150â
BDW64C
VCB= -100V; IE= 0
VCB= -100V; IE= 0; TJ= 150â
BDW64D
VCB= -120V; IE= 0
VCB= -120V; IE= 0; TJ= 150â
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -2A; VCE= -3V
hFE-2
DC Current Gain
IC= -6A; VCE= -3V
Switching times
ton
Turn-on Time
toff
Turn-off Time
IC= -3A; IB1= -IB2= -12mA;
VBE(off)= -4.5V, RL=10Ω
MIN TYP.
-45
MAX
UNIT
-60
-80
V
-100
-120
-2.5
V
-4.0
V
-2.5
V
-3.5
V
-0.5 mA
-0.2
-5.0
-0.2
-5.0
-0.2
-5.0
mA
-0.2
-5.0
-0.2
-5.0
-2.0 mA
750
20000
100
1.0
μs
5.0
μs
isc Websiteï¼www.iscsemi.cn
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