BDW64 Datasheet, PDF (1/2 Pages) Power Innovations Ltd – PNP SILICON POWER DARLINGTONS

INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
BDW64/A/B/C/D
DESCRIPTION
·Collector Current -I_C= -6A
·High DC Current Gain-h_FE= 750(Min.)@ I_C= -2A
·Complement to Type BDW63/A/B/C/D
APPLICATIONS
·Designed for audio output stages and general amplifier
and switching applications
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
BDW64
-45
V_CBO
Collector-Base
Voltage
BDW64A
BDW64B
BDW64C
-60
-80
-100
BDW64D
-120
BDW64
-45
V_CEO
Collector-Emitter
Voltage
BDW64A
BDW64B
BDW64C
-60
-80
-100
BDW64D
-120
V_EBO
Emitter-Base Voltage
-5
I_C
Collector Current-Continuous
-6
I_BB
Base Current-Continuous
-0.1
Collector Power Dissipation
P_C
@ T_a=25℃
Collector Power Dissipation
@ T_C=25℃
2
60
T_J
Junction Temperature
150
T_stg
Storage Temperature Range
-65~150
UNIT
V
V
V
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Rth j-c
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
MAX
2.08
62.5
UNIT
℃/W
℃/W
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