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| BDW52 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
BDW52/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
BDW52
CONDITIONS
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
BDW52A
BDW52B
IC= -100mA; IB= 0
BDW52C
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A; IB=B -0.5A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A; IB= -2.5A
VBE(sat) Base-Emitter Saturation Voltage
IC= -10A; IB=- 2.5A
VBE(on)
ICBO
Base-Emitter On Voltage
BDW52
Collector
Cutoff Current
BDW52A
BDW52B
BDW52C
BDW52
IC= -5A; VCE= -4V
VCB= -45V; IE= 0
VCB= -45V; IE= 0; TC= 150â
VCB= -60V; IE= 0
VCB= -60V; IE= 0; TC= 150â
VCB= -80V; IE= 0
VCB= -80V; IE= 0; TC= 150â
VCB= -100V; IE= 0
VCB= -100V; IE= 0; TC= 150â
VCE= -22V; IB=B 0
ICEO
Collector
Cutoff Current
BDW52A
BDW52B
VCE= -30V; IB=B 0
VCE= -40V; IB=B 0
BDW52C
VCE= -50V; IB=B 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC=0
hFE-1
DC Current Gain
IC= -5A; VCE= -4V
hFE-2
DC Current Gain
IC= -10A; VCE= -4V
fT
Current Gain-Bandwidth Product
IC= -0.5A; VCE= -4V
MIN TYP. MAX UNIT
-45
-60
V
-80
-100
-1.0
V
-3.0
V
-2.5
V
-1.5
V
-0.5
-5.0
-0.5
-5.0
mA
-0.5
-5.0
-0.5
-5.0
-1.0 mA
-2.0 mA
20
150
5
3
MHz
isc Websiteï¼www.iscsemi.cn
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