BDW52 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
BDW52/A/B/C
DESCRIPTION
·Collector Current -I_C= -15A
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS) = -45V(Min)- BDW52; -60V(Min)- BDW52A
-80V(Min)- BDW52B; -100V(Min)- BDW52C
·Complement to Type BDW51/A/B/C
APPLICATIONS
·Designed for use in power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BDW52
-45
V_CBO
Collector-Base
Voltage
BDW52A
-60
V
BDW52B
-80
BDW52C
-100
BDW52
-45
V_CEO
Collector-Emitter
Voltage
BDW52A
-60
V
BDW52B
-80
BDW52C
-100
V_EBO
Emitter-Base Voltage
-5
V
I_C
Collector Current-Continuous
-15
A
I_CM
Collector Current-Peak
-20
A
I_BB
Base Current
P_C
Collector Power Dissipation
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
-7
A
125
W
200
℃
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance, Junction to Case
MAX
1.4
UNIT
℃/W
isc Website：www.iscsemi.cn