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| BDW40 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlington Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
BDW40
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB=B 10mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 50mA
VBE(on) Base-Emitter On Voltage
IC= 10A; VCE= 4V
60
V
2.0
V
3.0
V
3.0
V
ICBO
Collector Cutoff Current
VCB= 60V; IE= 0
1.0 mA
ICEO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
hFE-1
DC Current Gain
hFE-2
DC Current Gain
fT
Current-GainâBandwidth Product
COB
Output Capacitance
VCE= 30V; IB=B 0
VEB= 5V; IC= 0
IC= 5A; VCE= 4V
1000
IC= 10A; VCE= 4V
250
IC= 3A; VCE= 3V; ftest= 1MHz
4
IE= 0; VCB= 10V; ftest= 0.1MHz
2.0 mA
2.0 mA
MHz
200 pF
isc Websiteï¼www.iscsemi.cn
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