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| BDW40 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlington Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
BDW40
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 60V(Min)
·High DC Current Gain
: hFE= 1000(Min) @IC= 5A
·Low Collector Saturation Voltage
: VCE(sat)= 2.0V(Max.)@ IC= 5.0A
= 3.0V(Max.)@ IC= 10A
·Complement to Type BDW45
APPLICATIONS
·Designed for general purpose and low speed switching
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
15
A
IBB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
0.5
A
85
W
150
â
-55~150
â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.47 â/W
isc Websiteï¼www.iscsemi.cn
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