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| BDW23 Datasheet, PDF (2/2 Pages) Power Innovations Ltd – NPN SILICON POWER DARLINGTONS | |||
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
BDW23/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDW23
V(BR)CEO
Collector-Emitter
Breakdown Voltage
BDW23A
BDW23B
IC= 100mA ;IB=0
BDW23C
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2A; IB=B 8mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 6A; IB=B 60mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 2A; IB=B 8mA
VBE(on)-1 Base-Emitter On Voltage
VBE(on)-2 Base-Emitter On Voltage
VECF
C-E Diode Forward Voltage
IC= 1A ; VCE= 3V
IC= 6A ; VCE= 3V
IF= 2A
BDW23
VCE= 22V; IB=B 0
ICEO
Collector
Cutoff Current
BDW23A VCE= 30V; IB=B 0
BDW23B VCE= 40V; IB=B 0
BDW23C VCE= 50V; IB=B 0
BDW23 VCB= 45V;IE= 0
ICBO
Collector
Cutoff Current
BDW23A VCB= 60V;IE= 0
BDW23B VCB= 80V;IE= 0
BDW23C VCB= 100V;IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
hFE-1
DC Current Gain
IC= 1A ; VCE= 3V
hFE-2
DC Current Gain
IC= 2A ; VCE= 3V
hFE-3
DC Current Gain
IC= 6A ; VCE= 3V
MIN TYP. MAX UNIT
45
60
V
80
100
2
V
3
V
2.5
V
2.5
V
3
V
1.8
V
0.5
mA
0.2
mA
1000
750
100
2
mA
20000
isc Websiteï¼www.iscsemi.cn
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