 English |
|
|
|
|
|
|
|
| BDW23 Datasheet, PDF (1/2 Pages) Power Innovations Ltd – NPN SILICON POWER DARLINGTONS | |||
| |||
|
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
BDW23/A/B/C
DESCRIPTION
·Collector Current -IC= 6A
·High DC Current Gain-hFE= 750(Min)@ IC= 2A
·Complement to Type BDW24/A/B/C
APPLICATIONS
·Designed for hammer drivers, audio amplifiers applications
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
BDW23
45
BDW23A
60
VCER
Collector-Emitter
Voltage
V
BDW23B
80
BDW23C
100
BDW23
45
BDW23A
60
VCEO
Collector-Emitter
Voltage
V
BDW23B
80
BDW23C
100
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
6
A
ICM
Collector Current-Peak
8
A
IBB
Base Current-Continuous
Collector Power Dissipation
PC
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
0.2
A
50
W
150
â
-65~150 â
isc Websiteï¼www.iscsemi.cn
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese