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| BDV91 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BDV91/93/95
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
BDV91
60
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
BDV93 IC= 100mA ;IB=0
80
V
BDV95
100
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB=B 0.4A
1.0
V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 3.3A
3.0
V
VBE(sat) Base -Emitter Saturation Voltage
IC= 4A; IB=B 0.4A
1.6
V
VBE(on) Base-Emitter On Voltage
ICEO
Collector Cutoff Current
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 4A ; VCE= 4V
VCE= VCEOmax;IB= 0
VCB= VCBOmax;IE= 0
VCB= 1/2VCBOmax;IE= 0; TJ= 150â
VEB= 7V; IC=0
1.6
V
0.2 mA
0.1
1.0
mA
0.1 mA
hFE-1
DC Current Gain
IC= 4A ; VCE= 4V
20
hFE-2
DC Current Gain
IC= 10A ; VCE= 4V
5
fT
Current-GainâBandwidth Product IC= 0.5A ;VCE= 10V
3.0
MHz
Switching times
ton
Turn-on Time
toff
Turn-off Time
tf
Fall Time
IC= 4A; IB1= -IB2= 0.4A;
VCC= 30V
0.5
μs
2.0
μs
0.7
μs
isc Websiteï¼www.iscsemi.cn
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