BDV91 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·Collector Current -I_C= 10A
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS) = 45V(Min)- BDV91; 60V(Min)- BDV93
80V(Min)- BDV95
·Complement to Type BDV92/94/96
APPLICATIONS
·Designed for use in audio output stages and general
amplifier and switching applications
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CER
Collector-Emitter
Voltage
BDV91
60
BDV93
80
V
BDV95
100
V_CEO
Collector-Emitter
Voltage
BDV91
60
BDV93
80
V
BDV95
100
V_EBO
Emitter-Base Voltage
7
V
I_C
Collector Current-Continuous
10
A
I_CM
Collector Current-Peak
20
A
I_BB
Base Current
7
A
I_E
Emitter Current
Collector Power Dissipation
P_C
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
14
A
100
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance, Junction to Case
MAX UNIT
1.25 ℃/W
isc Product Specification
BDV91/93/95
isc Website：www.iscsemi.cn