BDV67 Datasheet, PDF (2/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BDV67/67A/67B/67C/67D
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDV67
V_(BR)CEO
Collector-emitter
breakdown voltage
BDV67A
BDV67B IC=30mA, IB=0
BDV67C
BDV67D
V_CEsat Collector-emitter saturation voltage I_C=10A ,I_B=40mA
V_BE
Base-emitter on voltage
I_CBO
Collector cut-off current
I_CEO
Collector cut-off current
I_C=10A ; V_CE=3V
V_CB=V_CBOmax, I_E=0
V_CB=1/2V_CBOmax; T_j=150
V_CE=1/2V_CEOmax, I_B=0
I_EBO
Emitter cut-off current
V_EB=5V; I_C=0
h_FE-1
DC current gain
I_C=1A ; V_CE=3V
h_FE-2
DC current gain
I_C=10A ; V_CE=3V
h_FE-3
DC current gain
I_C=16A ; V_CE=3V
C_C
Collector capacitance
I_E=0 ; V_CB=10V;f=1MHz
V_F
Diode forward voltage
I_E=10A
t_on
Turn-on time
t_off
Turn-off time
I_C = 10 A, I_B1 =-I_B2=40 mA
V_CC = 12V
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-mb} Thermal resistance junction to mounting base
MIN TYP. MAX UNIT
60
80
100
V
120
150
2.0
V
2.5
V
1.0
4.0
mA
1
mA
5
mA
3000
1000
1000
300
pF
3.0
V
1.0
s
3.5
s
MAX
0.625
UNIT
K/W
2