BDV67 Datasheet, PDF (1/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BDV67/67A/67B/67C/67D
DESCRIPTION
With TO-3PN package
Complement to type BDV66/66A/66B/66C/66D
DARLINGTON
High DC current gain
APPLICATIONS
For use in audio output stages and general
amplifier and switching applications.
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Tc=25 )
SYMBOL
PARAMETER
BDV67
BDV67A
V_CBO
Collector-base voltage BDV67B
BDV67C
BDV67D
BDV67
BDV67A
V_CEO
Collector-emitter voltage BDV67B
BDV67C
BDV67D
V_EBO
Emitter-base voltage
I_C
Collector current
I_CM
Collector current-peak
I_B
Base current
P_C
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
VALUE
80
100
120
140
160
60
80
100
120
150
5
16
20
0.5
200
150
-65~150
UNIT
V
V
V
A
A
A
W