BDV65 Datasheet, PDF (2/3 Pages) Power Innovations Ltd – NPN SILICON POWER DARLINGTONS

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BDV65/65A/65B/65C
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDV65
V_(BR)CEO
Collector-emitter
breakdown voltage
BDV65A
BDV65B
I_C=30mA, I_B=0
BDV65C
V_CEsat Collector-emitter saturation voltage I_C=5A ,I_B=20mA
V_BE
Base-emitter on voltage
I_C=5A ; V_CE=4V
I_CBO
Collector
cut-off current
BDV65
BDV65A
BDV65B
BDV65C
V_CB=60V, I_E=0
V_CB=30V, I_E=0;T_C=150
V_CB=80V, I_E=0
V_CB=40V, I_E=0;T_C=150
V_CB=100V, I_E=0
V_CB=50V, I_E=0;T_C=150
V_CB=120V, I_E=0
V_CB=60V, I_E=0;T_C=150
BDV65
V_CE=30V, I_B=0
I_CEO
Collector
cut-off current
BDV65A
BDV65B
V_CE=40V, I_B=0
V_CE=50V, I_B=0
BDV65C V_CE=60V, I_B=0
I_EBO
Emitter cut-off current
V_EB=5V; I_C=0
h_FE
DC current gain
I_C=5A ; V_CE=4V
V_EC
Diode forward voltage
I_E=10A
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance junction to case
MIN TYP. MAX UNIT
60
80
V
100
120
2.0
V
2.5
V
0.4
2.0
0.4
2.0
mA
0.4
2.0
0.4
2.0
2
mA
1000
5
mA
3.5
V
MAX
1.0
UNIT
/W
2