BDV65 Datasheet, PDF (1/3 Pages) Power Innovations Ltd – NPN SILICON POWER DARLINGTONS

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BDV65/65A/65B/65C
DESCRIPTION
With TO-3PN package
Complement to type BDV64/64A/64B/64C
DARLINGTON
High DC current gain
APPLICATIONS
For use in general purpose amplifier
applications.
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Tc=25 )
SYMBOL
PARAMETER
BDV65
V_CBO
Collector-base voltage
BDV65A
BDV65B
BDV65C
BDV65
V_CEO
BDV65A
Collector-emitter voltage
BDV65B
BDV65C
V_EBO
Emitter-base voltage
I_C
Collector current
I_CM
Collector current-peak
I_B
Base current
P_C
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
T_a=25
VALUE
60
80
100
120
60
80
100
120
5
12
15
0.5
125
3.5
150
-65~150
UNIT
V
V
V
A
A
A
W