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| BDV64 Datasheet, PDF (2/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(12A,125W) | |||
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INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
BDV64/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDV64
V(BR)CEO
Collector-Emitter
Breakdown Voltage
BDV64A
BDV64B
IC= -30mA; IB= 0
BDV64C
VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB=B -20mA
VBE(on) Base-Emitter On Voltage
ICEO
Collector Cutoff Current
IC= -5A; VCE= -4V
VCE= 1/2VCEOmax; IB= 0
BDV64
VCB= -40V; IE= 0;TJ= 150â
BDV64A VCB= -50V; IE= 0;TJ= 150â
ICBO
Collector Cutoff Current
BDV64B VCB= -60V; IE= 0;TJ= 150â
BDV64C VCB= -70V; IE= 0;TJ= 150â
ICBO
Collector Cutoff Current
VCB= VCBOmax; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE
DC Current Gain
IC= -5A; VCE= -4V
MIN TYP. MAX UNIT
-60
-80
V
-100
-120
-2.0 V
-2.5 V
-2.0 mA
-2.0 mA
1000
-0.4 mA
-5 mA
isc Websiteï¼www.iscsemi.cn
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