BDV64 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(12A,125W)

INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
BDV64/A/B/C
DESCRIPTION
·Collector Current -I_C= -12A
·Collector-Emitter Saturation Voltage-
: V_CE(sat)= -2.0V(Max.)@ I_C= -5A
·Complement to Type BDV65/A/B/C
APPLICATIONS
·Designed for audio output stages and general amplifier
and switching applications
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BDV64
-60
V_CBO
Collector-Base
Voltage
BDV64A
-80
V
BDV64B
-100
BDV64C
-120
BDV64
-60
V_CEO
Collector-Emitter
Voltage
BDV64A
-80
V
BDV64B
-100
BDV64C
-120
V_EBO Emitter-Base Voltage
-5
V
I_C
Collector Current-Continuous
-12
A
I_CM
Collector Current-Peak
-15
A
I_BB
Base Current-Continuous
Collector Power Dissipation
P_C
@ T_C=25℃
Collector Power Dissipation
@ T_a=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
-0.5
A
125
W
3.5
150
℃
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
R_{th j-a}
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
MAX UNIT
1.0 ℃/W
35.7 ℃/W
isc Website：www.iscsemi.cn