BDT95F Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BDT91F/93F/95F
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
BDT91F
BDT93F IC= 30mA ; IB= 0
BDT95F
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 3.3A
VBE(on) Base-Emitter On Voltage
ICBO
Collector Cutoff Current
ICEO
Collector Cutoff Current
IC= 4A; VCE= 4V
VCB= VCBOmax; IE= 0
VCB=¹/2VCBOmax; IE= 0,TJ=150℃
VCE= VCEOmax V; IB= 0
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
hFE-1
DC Current Gain
IC= 4A ; VCE= 4V
hFE-2
DC Current Gain
IC= 10A ; VCE= 4V
fT
Current-Gain—Bandwidth Product
Switching times
ton
Turn-On Time
toff
Turn-Off Time
IC= 500mA ; VCE= 10V
IC= 4A; IB1= -IB2= 0.4A
MIN TYP. MAX UNIT
60
80
V
100
1
V
3
V
1.6
V
0.1
5
mA
1
mA
1
mA
20
200
5
4
MHz
0.5
1
μs
2
4
μs
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