BDT95F Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BDT91F/93F/95F
DESCRIPTION
·DC Current Gain- hFE= 20~200@ IC= 4A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 60V(Min)- BDT91F; 80V(Min)- BDT93F;
100V(Min)- BDT95F
·Complement to Type BDT92F/94F/96F
APPLICATIONS
·Designed for use in audio output stages and general
amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BDT91F
60
VCBO
Collector-Base Voltage BDT93F
80
V
BDT95F
100
BDT91F
60
VCEO
Collector-Emitter Voltage BDT93F
80
V
BDT95F
100
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
20
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
4
A
32
W
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
6.4 ℃/W
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