BDT94 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
BDT92/94/96
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
BDT92
BDT94 IC= -30mA ; IB= 0
BDT96
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A; IB= -3.3A
VBE(on) Base-Emitter On Voltage
ICBO
Collector Cutoff Current
ICEO
Collector Cutoff Current
IC= -4A; VCE= -4V
VCB= VCBOmax; IE= 0
VCB=¹/2VCBOmax; IE= 0,TJ=150℃
VCE= VCEOmax V; IB= 0
IEBO
Emitter Cutoff Current
VEB= -7V; IC= 0
hFE-1
DC Current Gain
IC= -4A ; VCE= -4V
hFE-2
DC Current Gain
IC= -10A ; VCE= -4V
fT
Current-Gain—Bandwidth Product
Switching times
ton
Turn-On Time
toff
Turn-Off Time
IC= -500mA ; VCE= -10V
IC= -4A; IB1= -IB2= -0.4A
MIN TYP. MAX UNIT
-60
-80
V
-100
-1
V
-3
V
-1.6 V
-0.1
-1
mA
-0.2 mA
-0.1 mA
20
200
5
4
MHz
0.5 1.5 μs
1
3
μs
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