BDT94 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
BDT92/94/96
DESCRIPTION
·DC Current Gain- hFE= 20~200@ IC= -4A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -60V(Min)- BDT92; -80V(Min)- BDT94;
-100V(Min)- BDT96
·Complement to Type BDT91/93/95
APPLICATIONS
·Designed for use in audio output stages and general
amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
BDT92
-60
VCBO
Collector-Base Voltage BDT94
-80
BDT96
-100
BDT92
-60
VCEO
Collector-Emitter Voltage BDT94
-80
BDT96
-100
VEBO
Emitter-Base Voltage
-7
IC
Collector Current-Continuous
-10
ICM
Collector Current-Peak
-20
IB
Base Current-Continuous
-4
PC
Collector Power Dissipation
@ TC=25℃
90
TJ
Junction Temperature
150
Tstg
Storage Temperature Range
-65~150
UNIT
V
V
V
A
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.4 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 70 ℃/W
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