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| BDT92 Datasheet, PDF (2/3 Pages) Inchange Semiconductor Company Limited – Silicon PNP Power Transistors | |||
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
BDT92
CHARACTERISTICS
Tj=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=-100mA; IB=0
VCEsat-1 Collector-emitter saturation voltage IC=-3 A;IB=-0.3 A
VCEsat-2 Collector-emitter saturation voltage IC=-10 A;IB=-3.3 A
VBE
Base-emitter voltage
IC=-4A ; VCE=-4V
ICBO
Collector cut-off current
VCB=-60V; IE=0
ICEO
Collector cut-off current
VCE=-30V; IB=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-4A ; VCE=-4V
hFE-2
DC current gain
IC=-10A ; VCE=-4V
fT
Transition frequency
IC=-0.5A ; VCE=-10V
MIN TYP. MAX UNIT
-60
V
-1.1 V
-3.0 V
-1.6 V
-0.1 mA
-1.0 mA
-1.0 mA
20
200
5
4
MHz
2
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