BDT92 Datasheet, PDF (1/3 Pages) Inchange Semiconductor Company Limited – Silicon PNP Power Transistors

Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
BDT92
DESCRIPTION
·
·With TO-220C package
·Complement to type BDT91
APPLICATIONS
·For use in general purpose power amplifier
and switching applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
V_CBO
Collector-base voltage
Open emitter
V_CEO
Collector-emitter voltage
Open base
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current
I_B
Base current
P_C
Collector power dissipation
T_C≤25℃
T_j
Junction temperature
T_stg
Storage temperature
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance junction to case
VALUE
-60
-60
-5
-10
-6
90
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
MAX
1.39
UNIT
℃/W