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| BDT82F Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistors | |||
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INCHANGE Semiconductor
isc Silicon PNP Power Transistors
isc Product Specification
BDT82F/84F/86F/88F
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDT82F
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
BDT84F
BDT86F
IC= -30mA; IB= 0
BDT88F
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A; IB=B -0.5A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -7A; IB=B -0.7A
VBE(on) Base-Emitter On Voltage
IC= -5A ; VCE= -4V
ICES
Collector Cutoff Current
VCE= 0.8VCBOmax; VBE= 0
ICBO
Collector Cutoff Current
VCB= VCBOmax; IE= 0
IEBO
Emitter Cutoff Current
VEB= -7V; IC= 0
hFE-1
DC Current Gain
IC= -50mA ; VCE= -10V
hFE-2
DC Current Gain
IC= -5A ; VCE= -4V
fT
Current-GainâBandwidth Product IC= -0.5A ; VCE= -10V
Switching Times
ton
Turn-On Time
toff
Turn-Off Time
IC= -7A; IB1= -IB2= -0.7A
MIN TYP. MAX UNIT
-60
-80
V
-100
-120
-1.0 V
-1.6 V
-1.5 V
-1 mA
-0.2 mA
-0.1 mA
40
40
20
MHz
1
μs
2
μs
isc Websiteï¼www.iscsemi.cn
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