BDT82F Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistors

INCHANGE Semiconductor
isc Silicon PNP Power Transistors
isc Product Specification
BDT82F/84F/86F/88F
DESCRIPTION
·DC Current Gain -h_FE = 40(Min)@ I_C= -5A
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS) = -60V(Min)- BDT82F; -80V(Min)- BDT84F;
-100V(Min)- BDT86F; -120V(Min)- BDT88F
·Complement to Type BDT81F/83F/85F/87F
APPLICATIONS
·Designed for use in audio output stages and general amplifer
and switching applications
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BDT82F
-60
BDT84F
-80
V_CBO
Collector-Base Voltage
V
BDT86F -100
BDT88F -120
BDT82F
-60
BDT84F
-80
V_CEO
Collector-Emitter Voltage
V
BDT86F -100
BDT88F -120
V_EBO
Emitter-Base Voltage
-7
V
I_C
Collector Current-Continuous
-15
A
I_CM
Collector Current-Peak
-20
A
I_BB
Base Current
P_C
Collector Power Dissipation
T_C=25℃
T_j
Junction Temperature
T_stg
Storage Temperature Range
-4
A
36
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance,Junction to Case
MAX UNIT
6 ℃/W
isc Website：www.iscsemi.cn