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| BDT65F Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlington Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
BDT65F/AF/BF/CF
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDT65F
V(BR)CEO
Collector-Emitter
Breakdown Voltage
BDT65AF
BDT65BF
IC= 30mA ;IB=B 0
BDT65CF
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB=B 20mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 100mA
VBE(on) Base-Emitter On Voltage
VECF
C-E Diode Forward Voltage
ICEO
Collector Cutoff Current
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 5A ; VCE= 4V
IF= 5A
VCE= 1/2VCEOmax; IB= 0
VCB= VCBOmax;IE= 0
VCB= 1/2VCBOmax;IE= 0;TC= 150â
VEB= 5V; IC=0
hFE-1
DC Current Gain
IC= 1A ; VCE= 4V
hFE-2
DC Current Gain
IC= 5A ; VCE= 4V
hFE-3
DC Current Gain
IC= 12A ; VCE= 4V
COB
Output Capacitance
Switching times
IE= 0 ; VCB= 10V; ftest=1MHz
ton
Turn-On Time
toff
Turn-Off Time
IC= 5A; IB1= -IB2= 20mA;
VCC= 30V
MIN TYP. MAX UNIT
60
80
V
100
120
2.0
V
3.0
V
2.5
V
2.0
V
1
mA
0.4
2.0
mA
5
mA
1500
1000
1500
200
pF
1
2.5 μs
6
10 μs
isc Websiteï¼www.iscsemi.cn
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