 English |
|
|
|
|
|
|
|
| BDT65F Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlington Power Transistor | |||
| |||
|
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
BDT65F/AF/BF/CF
DESCRIPTION
·Collector Current -IC= 12A
·High DC Current Gain-hFE= 1000(Min)@ IC= 5A
·Complement to Type BDT64F/AF/BF/CF
APPLICATIONS
·Designed for audio output stages and general purpose
amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
BDT65F
60
VCER
Collector-Emitter
Voltage
BDT65AF
80
V
BDT65BF
100
BDT65CF
120
BDT65F
60
VCEO
Collector-Emitter
Voltage
BDT65AF
80
V
BDT65BF
100
BDT65CF
120
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
12
A
ICM
Collector Current-Peak
20
A
IBB
Base Current-Continuous
Collector Power Dissipation
PC
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
0.5
A
39
W
150
â
-65~150 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
5.7 â/W
isc Websiteï¼www.iscsemi.cn
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese