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| BDT63 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlington Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
BDT63/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
BDT63
60
V(BR)CEO
Collector-Emitter
Breakdown Voltage
BDT63A
BDT63B
IC= 30mA ;IB=B 0
80
V
100
BDT63C
120
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB=B 12mA
2.0
V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB=B 80mA
2.5
V
VBE(on) Base-Emitter On Voltage
VECF
C-E Diode Forward Voltage
ICEO
Collector Cutoff Current
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 3A ; VCE= 3V
IF= 3A
VCE= 1/2VCEOmax; IB= 0
VCB= VCBOmax;IE= 0
VCB= 1/2VCBOmax;IE= 0;TC= 150â
VEB= 5V; IC=0
2.5
V
2.0
V
0.5 mA
0.2
2.0
mA
5
mA
hFE-1
DC Current Gain
IC= 3A ; VCE= 3V
1000
hFE-2
DC Current Gain
IC= 10A ; VCE= 3V
3000
COB
Output Capacitance
Switching times
IE= 0 ; VCB= 10V; ftest= 1MHz
100
pF
ton
Turn-On Time
toff
Turn-Off Time
IC= 3A; IB1= -IB2= 12mA;
VCC= 10V
1.0 2.5 μs
5.0 10 μs
isc Websiteï¼www.iscsemi.cn
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