BDT63 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlington Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
BDT63/A/B/C
DESCRIPTION
·Collector Current -I_C= 10A
·High DC Current Gain-h_FE= 1000(Min)@ I_C= 3A
·Complement to Type BDT62/A/B/C
APPLICATIONS
·Designed for audio output stages and general purpose
amplifier applications
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BDT63
60
V_CER
Collector-Emitter
Voltage
BDT63A
80
V
BDT63B
100
BDT63C
120
BDT63
60
V_CEO
Collector-Emitter
Voltage
BDT63A
80
V
BDT63B
100
BDT63C
120
V_EBO
Emitter-Base Voltage
5
V
I_C
Collector Current-Continuous
10
A
I_CM
Collector Current-Peak
15
A
I_BB
Base Current-Continuous
Collector Power Dissipation
P_C
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
0.25
A
90
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance, Junction to Case
MAX UNIT
1.39 ℃/W
isc Website：www.iscsemi.cn