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| BDT60F Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Darlington Power Transistors | |||
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INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlington Power Transistors BDT60F/AF/BF/CF
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDT60F
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
BDT60AF
BDT60BF
IC= -30mA; IB= 0
BDT60CF
VCE(sat) Collector-Emitter Saturation Voltage IC= -1.5A; IB=B -6mA
VBE(on) Base-Emitter On Voltage
ICBO
Collector Cutoff Current
ICEO
Collector Cutoff Current
IC= -1.5A ; VCE= -3V
VCB= -30V; IE= 0
VCB= 1/2VCBO; IE= 0; TJ=150â
VCE= 1/2VCEO; IB= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -0.5A ; VCE= -3V
hFE-2
DC Current Gain
IC= -1.5A ; VCE= -3V
hFE-3
DC Current Gain
IC= -4A ; VCE= -3V
VECF-1 C-E Diode Forward Voltage
IF= 1.5A
VECF-2 C-E Diode Forward Voltage
IF= 4A
Switching Times
ton
Turn-On Time
toff
Turn-Off Time
IC= -1.5A; IB1= -IB2= -6mA
MIN TYP. MAX UNIT
-60
-80
V
-100
-120
-2.5 V
-2.5 V
-0.2
-1
mA
-0.2 mA
-5 mA
2000
750
250
2
V
2.1
V
0.3 1.5 μs
1.5 5.0 μs
isc Websiteï¼www.iscsemi.cn
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