BDT60F Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Darlington Power Transistors

INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlington Power Transistors BDT60F/AF/BF/CF
DESCRIPTION
·DC Current Gain -h_FE = 750(Min)@ I_C= -1.5A
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS) = -60V(Min)- BDT60F; -80V(Min)- BDT60AF
-100V(Min)- BDT60BF; -120V(Min)- BDT60CF
·Complement to Type BDT61F/61AF/61BF/61CF
APPLICATIONS
·Designed for use in audio amplifier output stages , general
purpose amplifier and high speed switching applications
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE UNIT
BDT60F
-60
V_CBO
Collector-Base
Voltage
BDT60AF
-80
V
BDT60BF
-100
BDT60CF
-120
BDT60F
-60
V_CEO
Collector-Emitter
Voltage
BDT60AF
-80
V
BDT60BF
-100
BDT60CF
-120
V_EBO Emitter-Base Voltage
-5
V
I_C
Collector Current-Continuous
-4
A
I_CM
Collector Current-Pulse
-6
A
I_BB
Base Current
Collector Power Dissipation
P_C
T_C=25℃
T_j
Junction Temperature
T_stg
Storage Ttemperature Range
-0.1
A
25
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance,Junction to Case
MAX UNIT
5 ℃/W
isc Website：www.iscsemi.cn