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| BDT42 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistors | |||
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INCHANGE Semiconductor
isc Silicon PNP Power Transistors
isc Product Specification
BDT42/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDT42
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
BDT42A
BDT42B
IC= -30mA; IB= 0
BDT42C
VCE(sat) Collector-Emitter Saturation Voltage
VBE(on) Base-Emitter On Voltage
ICES
Collector Cutoff Current
IC= -6A; IB=B -0.6A
IC= -6A ; VCE= -4V
VCE= VCEOmax; VBE= 0
BDT42/A
VCE= -30V; IB=B 0
ICEO
Collector Cutoff Current
BDT42B/C VCE= -60V; IB=B 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -0.3A ; VCE= -4V
hFE-2
DC Current Gain
IC= -3A ; VCE= -4V
fT
Current-GainâBandwidth Product
IC= -0.5A ; VCE= -10V
Switching Times
ton
Turn-On Time
toff
Turn-Off Time
IC= -6A; IB1= -IB2= -0.6A
MIN TYP. MAX UNIT
-40
-60
V
-80
-100
-1.5 V
-2.0 V
-0.4 mA
-0.2 mA
-0.5 mA
30
15
75
3
MHz
0.4
μs
0.7
μs
isc Websiteï¼www.iscsemi.cn
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