BDT42 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistors

INCHANGE Semiconductor
isc Silicon PNP Power Transistors
DESCRIPTION
·DC Current Gain -h_FE = 30(Min)@ I_C= -0.3A
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS) = -40V(Min)- BDT42; -60V(Min)- BDT42A
-80V(Min)- BDT42B; -100V(Min)- BDT42C
·Complement to Type BDT41/A/B/C
APPLICATIONS
·Designed for use in general purpose amplifer and switching
applications
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BDT42
-80
BDT42A -100
V_CBO
Collector-Base Voltage
V
BDT42B -120
BDT42C -140
BDT42
-40
BDT42A
-60
V_CEO
Collector-Emitter Voltage
V
BDT42B
-80
BDT42C -100
V_EBO
Emitter-Base Voltage
-5
V
I_C
Collector Current-Continuous
-6
A
I_CM
Collector Current-Peak
-10
A
I_BB
Base Current
P_C
Collector Power Dissipation
T_C=25℃
T_j
Junction Temperature
T_stg
Storage Temperature Range
-3
A
65
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
R_{th j-a}
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
MAX
1.92
70
UNIT
℃/W
℃/W
isc Product Specification
BDT42/A/B/C
isc Website：www.iscsemi.cn