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| BDT30F Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistors | |||
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INCHANGE Semiconductor
isc Silicon PNP Power Transistors
isc Product Specification
BDT30F/AF/BF/CF/DF
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDT30F
BDT30AF
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
BDT30BF
BDT30CF
IC= -30mA; IB= 0
BDT30DF
VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB=B -0.125A
VBE(on) Base-Emitter On Voltage
IC= -1A ; VCE= -4V
ICES
Collector Cutoff Current
VCE= VCEOmax; VBE= 0
ICEO
Collector
Cutoff Current
BDT30F/AF
VCE= -30V; IB=B 0
BDT30BF/CF VCE= -60V; IB=B 0
BDT30DF
VCE= -90V; IB=B 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -0.2A ; VCE= -4V
hFE-2
DC Current Gain
IC= -1A ; VCE= -4V
fT
Current-GainâBandwidth Product IC= -0.2A ; VCE= -10V
Switching Times
ton
Turn-On Time
toff
Turn-Off Time
IC= -1.0A; IB1= -IB2= -0.1A
MIN TYP. MAX UNIT
-40
-60
-80
V
-100
-120
-0.7 V
-1.3 V
-0.2 mA
-0.1 mA
-0.2 mA
40
15
75
3
MHz
0.3
μs
1.0
μs
isc Websiteï¼www.iscsemi.cn
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