BDT30F Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistors

INCHANGE Semiconductor
isc Silicon PNP Power Transistors
DESCRIPTION
·DC Current Gain -h_FE = 40(Min)@ I_C= -0.4A
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS) = -40V(Min)- BDT30F; -60V(Min)- BDT30AF
-80V(Min)- BDT30BF; -100V(Min)- BDT30CF
-120V(Min)- BDT30DF
·Complement to Type BDT29F/AF/BF/CF/DF
APPLICATIONS
·Designed for use in audio output stages , general purpose
amplifier and high speed switching applications
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE UNIT
BDT30F
-80
V_CBO
Collector-Base
Voltage
BDT30AF
-100
BDT30BF
-120
V
BDT30CF
-140
BDT30DF
-160
BDT30F
-40
V_CEO
Collector-Emitter
Voltage
BDT30AF
-60
BDT30BF
-80
V
BDT30CF
-100
BDT30DF
-120
V_EBO Emitter-Base Voltage
-5
V
I_C
Collector Current-Continuous
-1
A
I_CM
Collector Current-Peak
-3
A
I_BB
Base Current
P_C
Collector Power Dissipation
T_C=25℃
T_j
Junction Temperature
T_stg
Storage Ttemperature Range
-0.4
A
19
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
R_{th j-a}
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
MAX
9.17
55
UNIT
℃/W
℃/W
isc Website：www.iscsemi.cn
isc Product Specification
BDT30F/AF/BF/CF/DF