BDS19 Datasheet, PDF (2/2 Pages) Seme LAB – SILICON PLANAR EPITAXIAL PNP TRANSISTOR

NCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
BDS19
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA ;IB= 0
-150
V
VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A
-1.5 V
VBE(on) Base-Emitter On Voltage
ICBO
Collector Cutoff Current
IC= -1A ; VCE= 2V
VCE= -150V; VBE= 0
-1.0 V
-0.02 mA
ICEO
Collector Cutoff Current
VCE= -75V; VBE= 0
-0.1 mA
IEBO
Emitter Cutoff Current
VEB= -5V; IC=0
-0.01 mA
hFE-1
DC Current Gain
IC= -0.5A; VCE= -2V
40
250
hFE-2
DC Current Gain
IC=-4A; VCE= -2V
15
150
fT
Current-Gain—Bandwidth Product IC= -0.5A ; VCE= -10V
30
MHz
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