BDS19 Datasheet, PDF (1/2 Pages) Seme LAB – SILICON PLANAR EPITAXIAL PNP TRANSISTOR

NCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
BDS19
DESCRIPTION
·High Voltage: VCEV= -150V(Min)
·Low Saturation Voltage-
: VCE(sat)= -1.5V(Max)@ IC= -4A
·High Reliablity
APPLICATIONS
·Designed for power linear and switching application and
General puepose power.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
-150
VCEO
Collector-Emitter Voltage
-150
VEBO
Emitter-Base Voltage
-5
IC
Collector Current-Continuous
-8
IB
Base Current
-2
PC
Collector Power Dissipation
@ TC=25℃
50
TJ
Junction Temperature
200
Tstg
Storage Temperature Range
-65~200
UNIT
V
V
V
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
2.5 ℃/W
Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W
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