BDS18 Datasheet, PDF (2/2 Pages) Seme LAB – SILICON PNP EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
BDS18
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA;Ib=0
VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -0.05A
VBE(on) Base - Emitter voltage
Ic= –0.5A ;Vce= –2V
ICBO
Collector Cutoff Current
VCB= -120V ; IE=0
ICEO
Collector Cutoff Current
VCE= -60V ; IB=0
IEBO
Emitter Cutoff Current
VEB= -5V; IC=0
hFE
DC Current Gain
fT
Transition frequency
Switching times
IC= -4A ; VCE= -2V
Ic= –0.5A Vce= –4V
F = 20MHz
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= -2.0A ,
IB1= -IB2= -0.2A,VCC≈-80V
MIN MAX UNIT
-120
V
-0.4
V
-1.0
V
-20
μA
0.1
mA
-10
μA
40
250
30
MHZ
0.5
μs
1.5
μs
0.3
μs
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