BDS18 Datasheet, PDF (1/2 Pages) Seme LAB – SILICON PNP EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
BDS18
DESCRIPTION
·Low Collector Saturation Voltage
·Fast Switching Speed
APPLICATIONS
·Developed for power liner and switching
-Gener purpose power
.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-120
V
VCEO Collector-Emitter Voltage
-120
V
VEBO
Emitter-Base Voltage
-5.0
V
IC
Collector Current-Continuous
-8.0
A
IB
Base Current-Continuous
Pc
Collector Power Dissipation
@ TC<75℃
TJ
Junction Temperature
-2
A
50
W
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
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