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| BDS16 Datasheet, PDF (2/2 Pages) Seme LAB – SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES | |||
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NCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BDS16
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 0.5A; IB= 0.05A
ICBO
Collector Cutoff Current
VCE= 120V; VBE= 0
ICEO
Collector Cutoff Current
VCE= 60V; VBE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
hFE-1
DC Current Gain
IC= 0.5A; VCE= 2V
hFE-2
DC Current Gain
IC= 4A; VCE= 2V
fT
Current-GainâBandwidth Product IC= 0.5A ; VCE= 10V
120
V
1.5 V
0.4 V
0.02 mA
0.5 mA
0.01 mA
40
250
15
150
30
MHz
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