BDS16 Datasheet, PDF (1/2 Pages) Seme LAB – SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES

NCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BDS16
DESCRIPTION
·High Voltage: V_CEV= 120V(Min)
·Low Saturation Voltage-
: V_CE(sat)= 1.5V(Max)@ I_C= 4A
·High Reliablity
APPLICATIONS
·Designed for power linear and switching application and
General puepose power.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
V_CBO Collector-Base Voltage
120
V_CEO Collector-Emitter Voltage
120
V_EBO
Emitter-Base Voltage
5
I_C
Collector Current-Continuous
8
I_B
Base Current
2
P_C
Collector Power Dissipation
@ T_C=25℃
50
T_J
Junction Temperature
150
T_stg
Storage Temperature Range
-65~150
UNIT
V
V
V
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
R_{th j-a}
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
2.5 ℃/W
62.5 ℃/W
isc website：www.iscsemi.com
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