BD950 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – Collector-Emitter Breakdown Voltage-: V(BR)CEO= -60V(Min)

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
BD950
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA ; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= -1mA ; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -1mA ; IC= 0
VCE(_sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A
VBE(_on) Base-Emitter On Voltage
IC= -2A; VCE= -4V
ICBO
Collector Cutoff Current
ICEO
Collector Cutoff Current
VCB= -60V; IE= 0
VCB= -30V; IE= 0,TJ=150℃
VCE= -30V; IB= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -500mA ; VCE= -4V
hFE-2
DC Current Gain
IC= -2A ; VCE= -4V
fT
Current-Gain—Bandwidth Product
IC= -500mA ; VCE= -4V
Switching Times
t_on
Turn-On Time
t_off
Turn-Off Time
IC= -1.0A; IB1= -IB2= -0.1A;
VCC= -20V; RL= 20Ω
MIN TYP. MAX UNIT
-60
V
-60
V
-5
V
-1.0 V
-1.4 V
-50 μA
-1.0 mA
-0.1 mA
-0.2 mA
40
20
3
MHz
0.1
μs
0.4
μs
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