BD950 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Collector-Emitter Breakdown Voltage-: V(BR)CEO= -60V(Min)

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
BD950
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V_(BR)CEO= -60V(Min)
·DC Current Gain-
: h_FE= 40(Min)@ I_C= -500mA
·Complement to Type BD949
APPLICATIONS
·Designed for power amplifier and switching applications
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
-60
V
VCEO Collector-Emitter Voltage
-60
V
VEBO Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-5
A
ICM
Collector Current-Peak
Collector Power Dissipation
PC
@ TC=25℃
TJ
Junction Temperature
-8
A
40
W
150
℃
T_stg
Storage Temperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
R_{th j-a}
Thermal Resistance,Junction to Case
3.12 ℃/W
Thermal Resistance,Junction to Ambient 70 ℃/W
isc website：www.iscsemi.cn
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