BD949F Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – Complement to Type BD950F/952F/954F/956F

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BD949F/951F/953F/955F
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BD949F
Collector-Emitter
VCEO(SUS) _{Sustaining Voltage}
BD951F
BD953F
IC= 100mA ; IB= 0
BD955F
VCE(_sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A
VBE(_on) Base-Emitter On Voltage
ICBO
Collector Cutoff Current
ICEO
Collector Cutoff Current
IC= 2A; VCE= 4V
VCB= VCBOmax; IE= 0
VCB= ¹/2VCBOmax; IE= 0,TJ=150℃
VCE= ¹/2VCEOmax; IB= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 500mA ; VCE= 4V
hFE-2
DC Current Gain
IC= 2A ; VCE= 4V
fT
Current-Gain—Bandwidth Product IC= 500mA ; VCE= 4V
Switching Times
t_on
Turn-On Time
t_off
Turn-Off Time
IC= 1.0A; IB1= -IB2= 0.1A
MIN TYP. MAX UNIT
60
80
V
100
120
1.0 V
1.4 V
0.05
mA
1
0.1 mA
0.2 mA
40
20
3
MHz
0.3
μs
1.5
μs
isc website：www.iscsemi.cn
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