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| BD949F Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Complement to Type BD950F/952F/954F/956F | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BD949F/951F/953F/955F
DESCRIPTION
·DC Current Gain-
: hFE= 40(Min)@ IC= 500mA
·Complement to Type BD950F/952F/954F/956F
APPLICATIONS
·Designed for power amplifier and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
BD949F
60
BD951F
80
VCBO Collector-Base Voltage
V
BD953F
100
BD955F
120
BD949F
60
BD951F
80
VCEO Collector-Emitter Voltage
V
BD953F
100
BD955F
120
VEBO Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
Collector Power Dissipation
PC
@ TC=25â
TJ
Junction Temperature
8
A
22
W
150
â
Tstg
Storage Temperature Range
-65~150 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
8.12 â/W
isc websiteï¼www.iscsemi.cn
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