 English |
|
|
|
|
|
|
|
| BD944 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor | |||
| |||
| ◁ |
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
BD944/946/948
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
BD944
BD946
BD948
IC= -100mA ; IB= 0
VCE(sat)
Collector-Emitter
Saturation Voltage
BD944/946 IC= -2A; IB=B -0.2A
BD948
IC= -3A; IB=B -0.3A
VBE(on)
ICBO
ICEO
Base-Emitter
On Voltage
BD944/946 IC= -2A; VCE= -1V
BD948
IC= -3A; VCE= -1V
Collector Cutoff Current
VCB= VCBOmax; IE= 0
VCB= VCBOmax; IE= 0,TJ=150â
Collector
Cutoff Current
BD944
BD946
VCE= -15V; IB=B 0
VCE= -20V; IB=B 0
BD948
VCE= -25V; IB=B 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -10mA ; VCE= -5V
hFE-2
DC Current Gain
IC= -500mA ; VCE= -1V
hFE-3
DC Current Gain
BD944/946
BD948
IC= -2A ; VCE= -1V
hFE-4
DC Current Gain--Only For BD948 IC= -3A ; VCE= -1V
fT
Current-GainâBandwidth Product IC= -250mA ; VCE= -1V
MIN TYP. MAX UNIT
-22
-32
V
-45
-0.5
V
-0.7
-1.1
V
-1.3
-0.05
-1
mA
-0.1 mA
-0.2 mA
25
85
475
50
40
30
3
MHz
isc Websiteï¼www.iscsemi.cn
2
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese